Skip to Main content Skip to Navigation
Journal articles

Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters

Abstract : We exhibit both experimentally and theoretically a novel growth mode for the epi-taxy of AlGaN quantum dots (QD), where they are eventually produced without their usual surrounding wetting layer. If the generic evolution of QD is ruled by the elastic relaxation and capillary effects, evaporation occurs here on a time scale similar to that of growth. Using a dedicated surface diffusion model accounting for elasticity, wetting and anisotropy, we evidence numerically different kinetic regimes as a function of the evaporation flux, that rationalize the experimental outcome. The resulting QD are characterized by enhanced optical properties compared to the common QD with a wetting layer. These nanostructures are promising candidates for deep ultraviolet light emitting diodes.
Document type :
Journal articles
Complete list of metadatas

Cited literature [41 references]  Display  Hide  Download
Contributor : Hal Sorbonne Université Gestionnaire <>
Submitted on : Monday, June 29, 2020 - 3:44:01 PM
Last modification on : Wednesday, November 25, 2020 - 5:46:02 PM


 Restricted access
To satisfy the distribution rights of the publisher, the document is embargoed until : 2020-12-29

Please log in to resquest access to the document



Guido Schifani, Thomas Frisch, Julien Brault, Philippe Vennegues, Samuel Matta, et al.. Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters. ACS Applied Nano Materials, American Chemical Society, 2020, 3 (5), pp.4054-4060. ⟨10.1021/acsanm.9b02546⟩. ⟨hal-02883981⟩



Record views